Recent Advances in Wide Bandgap Devices for Automotive Industry

Yan Berube; Amin Ghazanfari; Handy Fortin Blanchette; Christian Perreault; Karim Zaghib

doi:10.1109/IECON43393.2020.9254478

Recent Advances in Wide Bandgap Devices for Automotive Industry

Yan Berube, Amin Ghazanfari, Handy Fortin Blanchette, Christian Perreault, Karim Zaghib

Hydro-Quebec

Research output: Contribution to Book/Report types › Contribution to conference proceedings › peer-review

16 Citations (Scopus)

Abstract

The main barriers in the widespread adoption of electric vehicles (EVs) include limited autonomy, high up-front cost, low availability of charging infrastructure, and long charging time. Wide bandgap (WBG) semiconductors are key industry players in the electronics circuit design because they are advantageous in terms of high operating temperature, high efficiency, and low volume and weight. The WBG devices improve power density and allow power electronics (PE) circuits to reach operating points and temperatures that have not been considered before. Currently, SiC and GaN are the most viable WBG semiconductor candidates to replace Si-based devices. However, the cost, packaging limitations, reliability, safety, low manufacturing, and demand level of WBGs are issues that should be addressed; the integration of these devices into the automotive power electronic (APE) systems can then successfully be realized. This paper presents an industrial oriented overview of WBG power semiconductors including their advantages, recent progress, challenges, and development partnerships.

Original language	English
Title of host publication	Proceedings - IECON 2020
Subtitle of host publication	46th Annual Conference of the IEEE Industrial Electronics Society
Publisher	IEEE Computer Society
Pages	2557-2564
Number of pages	8
ISBN (Electronic)	9781728154145
DOIs	https://doi.org/10.1109/IECON43393.2020.9254478
Publication status	Published - 18 Oct 2020
Event	46th Annual Conference of the IEEE Industrial Electronics Society, IECON 2020 - Virtual, Singapore, Singapore Duration: 19 Oct 2020 → 21 Oct 2020

Publication series

Name	IECON Proceedings (Industrial Electronics Conference)
Volume	2020-October

Conference

Conference	46th Annual Conference of the IEEE Industrial Electronics Society, IECON 2020
Country/Territory	Singapore
City	Virtual, Singapore
Period	19/10/20 → 21/10/20

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy
SDG 9 Industry, Innovation, and Infrastructure

!!!Keywords

Gallium Nitride (GaN)
Silicon Carbide (SiC)
Wide bandgap (WBG) power semiconductor
automotive power electronic (APE)
electric vehicles (EVs)

Access to Document

10.1109/IECON43393.2020.9254478

Cite this

Berube, Y., Ghazanfari, A., Blanchette, H. F., Perreault, C., & Zaghib, K. (2020). Recent Advances in Wide Bandgap Devices for Automotive Industry. In Proceedings - IECON 2020: 46th Annual Conference of the IEEE Industrial Electronics Society (pp. 2557-2564). Article 9254478 (IECON Proceedings (Industrial Electronics Conference); Vol. 2020-October). IEEE Computer Society. https://doi.org/10.1109/IECON43393.2020.9254478

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title = "Recent Advances in Wide Bandgap Devices for Automotive Industry",

abstract = "The main barriers in the widespread adoption of electric vehicles (EVs) include limited autonomy, high up-front cost, low availability of charging infrastructure, and long charging time. Wide bandgap (WBG) semiconductors are key industry players in the electronics circuit design because they are advantageous in terms of high operating temperature, high efficiency, and low volume and weight. The WBG devices improve power density and allow power electronics (PE) circuits to reach operating points and temperatures that have not been considered before. Currently, SiC and GaN are the most viable WBG semiconductor candidates to replace Si-based devices. However, the cost, packaging limitations, reliability, safety, low manufacturing, and demand level of WBGs are issues that should be addressed; the integration of these devices into the automotive power electronic (APE) systems can then successfully be realized. This paper presents an industrial oriented overview of WBG power semiconductors including their advantages, recent progress, challenges, and development partnerships.",

keywords = "Gallium Nitride (GaN), Silicon Carbide (SiC), Wide bandgap (WBG) power semiconductor, automotive power electronic (APE), electric vehicles (EVs)",

author = "Yan Berube and Amin Ghazanfari and Blanchette, \{Handy Fortin\} and Christian Perreault and Karim Zaghib",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 46th Annual Conference of the IEEE Industrial Electronics Society, IECON 2020 ; Conference date: 19-10-2020 Through 21-10-2020",

year = "2020",

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doi = "10.1109/IECON43393.2020.9254478",

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Berube, Y, Ghazanfari, A, Blanchette, HF, Perreault, C & Zaghib, K 2020, Recent Advances in Wide Bandgap Devices for Automotive Industry. in Proceedings - IECON 2020: 46th Annual Conference of the IEEE Industrial Electronics Society., 9254478, IECON Proceedings (Industrial Electronics Conference), vol. 2020-October, IEEE Computer Society, pp. 2557-2564, 46th Annual Conference of the IEEE Industrial Electronics Society, IECON 2020, Virtual, Singapore, Singapore, 19/10/20. https://doi.org/10.1109/IECON43393.2020.9254478

Recent Advances in Wide Bandgap Devices for Automotive Industry. / Berube, Yan; Ghazanfari, Amin; Blanchette, Handy Fortin et al.
Proceedings - IECON 2020: 46th Annual Conference of the IEEE Industrial Electronics Society. IEEE Computer Society, 2020. p. 2557-2564 9254478 (IECON Proceedings (Industrial Electronics Conference); Vol. 2020-October).

Research output: Contribution to Book/Report types › Contribution to conference proceedings › peer-review

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AU - Berube, Yan

AU - Ghazanfari, Amin

AU - Blanchette, Handy Fortin

AU - Perreault, Christian

AU - Zaghib, Karim

PY - 2020/10/18

Y1 - 2020/10/18

N2 - The main barriers in the widespread adoption of electric vehicles (EVs) include limited autonomy, high up-front cost, low availability of charging infrastructure, and long charging time. Wide bandgap (WBG) semiconductors are key industry players in the electronics circuit design because they are advantageous in terms of high operating temperature, high efficiency, and low volume and weight. The WBG devices improve power density and allow power electronics (PE) circuits to reach operating points and temperatures that have not been considered before. Currently, SiC and GaN are the most viable WBG semiconductor candidates to replace Si-based devices. However, the cost, packaging limitations, reliability, safety, low manufacturing, and demand level of WBGs are issues that should be addressed; the integration of these devices into the automotive power electronic (APE) systems can then successfully be realized. This paper presents an industrial oriented overview of WBG power semiconductors including their advantages, recent progress, challenges, and development partnerships.

AB - The main barriers in the widespread adoption of electric vehicles (EVs) include limited autonomy, high up-front cost, low availability of charging infrastructure, and long charging time. Wide bandgap (WBG) semiconductors are key industry players in the electronics circuit design because they are advantageous in terms of high operating temperature, high efficiency, and low volume and weight. The WBG devices improve power density and allow power electronics (PE) circuits to reach operating points and temperatures that have not been considered before. Currently, SiC and GaN are the most viable WBG semiconductor candidates to replace Si-based devices. However, the cost, packaging limitations, reliability, safety, low manufacturing, and demand level of WBGs are issues that should be addressed; the integration of these devices into the automotive power electronic (APE) systems can then successfully be realized. This paper presents an industrial oriented overview of WBG power semiconductors including their advantages, recent progress, challenges, and development partnerships.

KW - Gallium Nitride (GaN)

KW - Silicon Carbide (SiC)

KW - Wide bandgap (WBG) power semiconductor

KW - automotive power electronic (APE)

KW - electric vehicles (EVs)

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M3 - Contribution to conference proceedings

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T3 - IECON Proceedings (Industrial Electronics Conference)

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EP - 2564

BT - Proceedings - IECON 2020

PB - IEEE Computer Society

T2 - 46th Annual Conference of the IEEE Industrial Electronics Society, IECON 2020

Y2 - 19 October 2020 through 21 October 2020

ER -

Recent Advances in Wide Bandgap Devices for Automotive Industry

Abstract

Publication series

Conference

UN SDGs

!!!Keywords

Access to Document

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