A 0.16-3.7GHz Ultra-Compact Noise-Canceling Cryogenic Low-Noise Amplifier at 4 K using 16nm FinFET Technology for Qubit Readout

The rapid evolution of quantum computing drives the demand for CMOS cryogenic electronics to support qubit scaling (Fig. 1). In this regard, we present a 16 nm FinFET technology-based cryogenic low noise amplifier (LNA) crucial for enhancing qubit readout fidelity [1]. FinFETs offer fewer temperature deviations compared to planar generations due to improved gate control [ 2 - 3 ]. The choice of the 16 nm technology node maximizes modern digital capabilities and enables superior system-on-chip (SoC) integration for quantum applications. Our circuit design is based on the cryogenic FinFET device gain and noise temperature characterization at 20 K (Fig. 2) with 50-Ohm ports and the given device models down to -40°C (Fig. 3). Although transistor operation at low temperatures follows standard theory, deviations occur due to factors such as dopant freeze-out and subthreshold slope saturation caused by band tails [4]. This underscores the need for accurate device characterization at low temperatures during the early design stages. Initial results at 4 K suggest the FinFET LNA's potential for low noise, low power, and high gain operation.