A 4-mW 2.2-6.9 GHz LNA in 16 nm FinFET Technology for Cryogenic Applications

Runzhou Chen; Hamdi Mani; Phil Marsh; Richard Al Hadi; Pragya Shrestha; Jason Campbell; Christopher Chen; Hao Yu Chien; Kosmas Galatsis; Mau Chung Frank Chang

doi:10.1109/LMWT.2024.3477328

A 4-mW 2.2-6.9 GHz LNA in 16 nm FinFET Technology for Cryogenic Applications

Runzhou Chen
, Hamdi Mani
, Phil Marsh
, Richard Al Hadi
, Pragya Shrestha
, Jason Campbell
, Christopher Chen
, Hao Yu Chien
, Kosmas Galatsis
, Mau Chung Frank Chang

Résultats de recherche: Contribution à un journal › Article publié dans une revue, révisé par les pairs › Revue par des pairs

6 Citations (Scopus)

Résumé

This work presents the design and measurement of a low-power wide-band cryogenic low-noise amplifier (LNA) that operates at both room and cryogenic temperatures using 16 nm FinFET technology. The LNA is packaged and measured at both room and cryogenic temperatures. It features a compact multistage cascode topology and operates between 2.2 and 6.9 GHz, with a noise figure (NF) of 0.36 dB, a peak gain of 31.4 dB, and a total dc power consumption of 4 mW at 18 K temperature.

langue originale	Anglais
Pages (de - à)	1351-1354
Nombre de pages	4
journal	IEEE Microwave and Wireless Technology Letters
Volume	34
Numéro de publication	12
Les DOIs	https://doi.org/10.1109/LMWT.2024.3477328
état	Publié - 2024

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10.1109/LMWT.2024.3477328

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Contient cette citation

@article{fdd35bee0ab04ceebd191f0843409fc4,

title = "A 4-mW 2.2-6.9 GHz LNA in 16 nm FinFET Technology for Cryogenic Applications",

abstract = "This work presents the design and measurement of a low-power wide-band cryogenic low-noise amplifier (LNA) that operates at both room and cryogenic temperatures using 16 nm FinFET technology. The LNA is packaged and measured at both room and cryogenic temperatures. It features a compact multistage cascode topology and operates between 2.2 and 6.9 GHz, with a noise figure (NF) of 0.36 dB, a peak gain of 31.4 dB, and a total dc power consumption of 4 mW at 18 K temperature.",

keywords = "Cryogenic FinFET, FinFET low-noise amplifier (LNA)",

author = "Runzhou Chen and Hamdi Mani and Phil Marsh and \{Al Hadi\}, Richard and Pragya Shrestha and Jason Campbell and Christopher Chen and Chien, \{Hao Yu\} and Kosmas Galatsis and \{Frank Chang\}, \{Mau Chung\}",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.",

year = "2024",

doi = "10.1109/LMWT.2024.3477328",

language = "English",

volume = "34",

pages = "1351--1354",

journal = "IEEE Microwave and Wireless Technology Letters",

issn = "2771-957X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - A 4-mW 2.2-6.9 GHz LNA in 16 nm FinFET Technology for Cryogenic Applications

AU - Chen, Runzhou

AU - Mani, Hamdi

AU - Marsh, Phil

AU - Al Hadi, Richard

AU - Shrestha, Pragya

AU - Campbell, Jason

AU - Chen, Christopher

AU - Chien, Hao Yu

AU - Galatsis, Kosmas

AU - Frank Chang, Mau Chung

PY - 2024

Y1 - 2024

N2 - This work presents the design and measurement of a low-power wide-band cryogenic low-noise amplifier (LNA) that operates at both room and cryogenic temperatures using 16 nm FinFET technology. The LNA is packaged and measured at both room and cryogenic temperatures. It features a compact multistage cascode topology and operates between 2.2 and 6.9 GHz, with a noise figure (NF) of 0.36 dB, a peak gain of 31.4 dB, and a total dc power consumption of 4 mW at 18 K temperature.

AB - This work presents the design and measurement of a low-power wide-band cryogenic low-noise amplifier (LNA) that operates at both room and cryogenic temperatures using 16 nm FinFET technology. The LNA is packaged and measured at both room and cryogenic temperatures. It features a compact multistage cascode topology and operates between 2.2 and 6.9 GHz, with a noise figure (NF) of 0.36 dB, a peak gain of 31.4 dB, and a total dc power consumption of 4 mW at 18 K temperature.

KW - Cryogenic FinFET

KW - FinFET low-noise amplifier (LNA)

UR - https://www.scopus.com/pages/publications/85211617603

U2 - 10.1109/LMWT.2024.3477328

DO - 10.1109/LMWT.2024.3477328

M3 - Journal Article

AN - SCOPUS:85211617603

SN - 2771-957X

VL - 34

SP - 1351

EP - 1354

JO - IEEE Microwave and Wireless Technology Letters

JF - IEEE Microwave and Wireless Technology Letters

IS - 12

ER -