Modeling and simulation of high speed semiconductors used in GaN and SiC power converters

Abstract

By considering the merits of increasing power converters switching frequency, e.g., passive components size reduction, using wide-bandgap (WBG) semiconductors is an inevitable part of new generations of power converters. Designing a power converter in such high frequencies needs accurate modeling of semiconductor switches. In this thesis, after surveying the state-of-the-art, a new approach has been proposed for modeling and verifying the performance of these new generations of semiconductor switches (SiC-MOSFETs and GaN-FETs). A new mathematical method is proposed for modeling the switches’ current. Besides, an equivalent circuit is proposed for PiN power diodes, facilitating the circuit analysis of the switching dynamic. Finally, a set of state equations has been derived to simulate the switching transients by considering the impact of parasitic elements of the circuit. The main advantage of this set of equations is its validity during the entire switching period. In other words, it is not needed to divide the switching’s transient periods into smaller segments and analyze the circuit in each segment separately. The simulation results have been presented in two different scenarios. Comparing these results with the switches’ datasheets shows the promising performance of the proposed method.

Date	16 Nov 2021
Original language	American English
Awarding Institution	École de technologie supérieure
Supervisor	Handy Fortin Blanchette (Supervisor)