Ferroelectric and photovoltaic (FEPV) effect of bismuth ferrite (BiFeO3 or BFO) is extremely promising but has rarely been studied in optoelectronic devices. In this study, we wanted to understand how the properties of bismuth ferrite, especially its FEPV effect, can affect the performances of an optoelectronic device.
Here, we developed, by chemical solution deposition, a thin layer of polycristallin bismuth ferrite that we integrated into an active photodetector based of pseudo organometallic perovskite. Highly efficient and low cost, the devices made of BFO showed a significant improvement of responsivity and detectivity, over the visible spectrum, compared to the device without BFO. These features are futher improved by the introduction of a 10 mol% chromium doped BFO layer into the device. Also, response times were reduced by around 20% by the integration of pure BFO in the device and 50% by the integration of chromium doped BFO.
In this study, we first showed that BFO layer played the role of a hole blocking layer (HBL) and passivation layer reducing drastically the leakage current of the device. The introduction of BFO layer into the photodetector leads to an increase of generated photo-current in the device. Here, we highlighted that the introduction of BFO layer, pure or chromium doped, into a photodetector results in a considerable improve in the photodetector performances.
| Date | 4 Nov 2020 |
|---|
| Original language | French |
|---|
| Awarding Institution | - École de technologie supérieure
|
|---|
| Supervisor | Sylvain G. Cloutier (Supervisor) |
|---|
Bouzidi, S. (Author),
Cloutier (Supervisor),
4 Nov 2020Student thesis: Master's thesis › Master in Engineering: Electrical Engineering