A 0.16-3.7GHz Ultra-Compact Noise-Canceling Cryogenic Low-Noise Amplifier at 4 K using 16nm FinFET Technology for Qubit Readout

Keyphrases

• Band Tails 50%
• Circuit Design 50%
• Cryogenic Electronics 50%
• Cryogenic Low Noise Amplifier 100%
• Device Characterization 50%
• Device Modeling 50%
• Digital Capabilities 50%
• Dopant 50%
• Early Design Phases 50%
• Fin Field-effect Transistor (FinFET) 100%
• FinFET Devices 50%
• FinFET Technology 100%
• Freeze-out 50%
• Gate Control 50%
• High Gain 50%
• Low Noise 50%
• Low Power 50%
• Low Temperature 100%
• Noise Cancellation 100%
• Noise Temperature 50%
• On-chip Integration 50%
• Power Gain 50%
• Quantum Applications 50%
• Quantum Computing 50%
• Qubit 50%
• Qubit Readout 100%
• Rapid Evolution 50%
• Subthreshold Slope 50%
• Technology Node 50%
• Technology-based 50%
• Temperature Characterization 50%
• Temperature Deviation 50%
• Transistor Control 50%
• Ultra-compact 100%

Engineering

• Band Tail 33%
• Circuit Design 33%
• Control Gate 33%
• Design Stage 33%
• Dopants 33%
• Low Noise Amplifier 100%
• Low-Temperature 66%
• Nodes 33%
• Power Gain 33%
• Quantum Computation 33%
• Qubit 100%
• Subthreshold Slope 33%
• System-on-Chip 33%