Post-Release Metallization in MEMS Silicon-to-Silicon Contact Switches for On-Resistance Improvement

This work reports a post-release sputter-metallization process for microelectromechanical systems (MEMS) switches with silicon-to-silicon (Si-to-Si) contacts fabricated by deep reactive ion etching. Platinum (Pt) was selectively deposited on the contacting platforms through a perforated mask. Alternatively, aluminum (Al) was deposited over a thin chromium (Cr) adhesion layer. Electrical measurements showed that Pt enabled a contact resistance on the order of 406  (Formula presented.) at a 1  (Formula presented.) (Formula presented.) test current, whereas the resistance of Al/Cr coatings decreased from (Formula presented.)   (Formula presented.) (Formula presented.) at 1  (Formula presented.) (Formula presented.) to 270  (Formula presented.) at 25  (Formula presented.) (Formula presented.), a change that was potentially linked to oxidation of the Al. These results demonstrated successful coating, with uniform top-surface and edge coverage as revealed by energy-dispersive X-ray spectroscopy imaging. Overall, the results indicate that post-release metallization has the potential to improve the operational repeatability of Si-to-Si contact MEMS switches in static and dynamic tests; the findings also point to process refinements to further optimize contact resistance.