Régulateur de tension CMOS à faible consommation de courant et bas voltage pour amplificateurs RF intégrés

Résumé

CMOS voltage regulators intented for GaAs HBT RFIC power amplifiers must operate under specific conditions. With low current consumption and low supply voltage, they must be able to provide high currents to these amplifiers, while remaining insensitive to RF perturbations. The « Recycled Folded-Cascode » structure allows low voltage operation and exhibit good AC performance. However, some improvements have been made so that it can adress this problem. Powered at 1.8 V, the bias current was reduced from 800 μA to 135 μA, and the addition of a buffer was required to increase the current capability up to 20 mA. The RFC structure thus improved was used in a feedback configuration, to regulate the voltage applied to a load emulating GaAs HBT transistor behavior at 1.4V. The adverse effects of RF infiltration through the isolation inductor separating these two circuits were studied (RF leakage in the bias circuits). The proposed desensitization technique reduces the isolation inductor to 6 nH, which favours integration on chip. It also reduces the fall in output voltage by 100 mV while the regulator provides 20 mA to the load, so that it achieves 97% voltage regulation. The methodology used takes into account an RF signal of 1.88 GHz, with an available power of 20 dBm. This thesis also includes an educational component, in the form of a simple and easily accessible educational tool, in order to improve the training of engineering students in analog electronics.

Date	18 avr. 2012
langue originale	Anglais américain
Établissement diplômant	École de technologie supérieure
Superviseur	Nicolas Constantin (Directeur(-trice)) & Vahé Nerguizian (Codirecteur(-trice))