Modélisation électrothermique de transistors en technologie GaN

Abstract

The analysis of the Gallium Nitride or GaN dispositive highlights that it is a serious candidate for telecommunication and radar applications. The aim of this study is to assess the potentialities of HEMTs AlGaN/GaN, and to propose a precise small-signal model of this type of transistor based on an extrinsic parameter extraction method. This method allows determining judiciously the extrinsic parameters while neglecting the pad capacitances. Thereafter, the intrinsic parameters are determined using a classical method. Our procedure of extraction is validated using two multifingers transistors 4x20 μm and 2x100 μm. Excellent agreement is obtained between simulated and measured S parameters, for both transistors. The results indicate the accuracy and consistency of this method. The small-signal GaN-HEMT model proposed, with a distributed gate model, is approved with an experimental validation performed on multifingers transistors 4x20 and 2x100 μm HEMT.

Date	25 Mar 2011
Original language	French
Awarding Institution	École de technologie supérieure
Supervisor	Ammar B. Kouki (Supervisor)